Integrated 100kHz narrow linewidth laser light source project to break the international monopoly

[Chinese instrument network instrument research and development] Recently, the Chinese Academy of Sciences Fujian Institute for the Study of the Structure of Matter undertaken by the Institute of Research on the Structure of Information Technology in the National "863" Program "Integrated 100 kHz Narrow Linewidth Laser Source" (Question No. 2013AA014202) through High Technology Research and Development of the Ministry of Science and Technology Expert acceptance by the center.



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This project is aimed at the special requirements of narrow-line-width lasers for 400Gb/s high-speed coherent optical communication systems. Research has been carried out on the growth of semiconductor gain materials, such as laser gain chip preparation, fiber grating design, and semiconductor laser structure packaging. Localization has been developed based on double The FBG external-cavity narrow-width-width semiconductor laser with a segmented gain chip achieves a compact, low-power, low-cost, highly stable, narrow-linewidth laser output. The full-current tuning range of the device is < 20 kHz, the narrowest line width is 6.5 kHz, the fiber output power is >10 mW, the side mode suppression ratio is > 40dB, and the relative intensity noise is <-160dB/Hz. The key indicators of the device are at or close to the international level of similar products.
The technical achievements studied in this project have broken the international monopoly and laid a solid foundation for the manufacture of external cavity semiconductor lasers with independent intellectual property rights in China and the development of a new generation of optical communications industry.
(Original title: Project 863 "Integrated 100 kHz Narrow Linewidth Laser Source" Passed Acceptance)

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